Abstract
The formation of an Rb‐containing In‐Se compound at the surface of Cu(In,Ga)Se2 (CIGS) thin films is assumed to be part of the mechanism of RbF post‐deposition treatments (PDTs) performed on these absorber layers. Alkali‐PDTs have acquired attention lately as they significantly enhance the efficiency of CIGS solar cells. In this contribution the formation of various phases during the RbF‐PDT has been investigated. The results indicate that RbInSe2 is the most probable phase to form. Combining theoretical and experimental investigations, fundamental properties of a thermally co‐evaporated RbInSe2 thin film are reported in order to serve as reference values in further studies.
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