Abstract
The properties of SnO 2 films obtained by hydrolysis of stannic chloride on silicon surfaces are described. The layers grown by this method possess certain characteristics which make them interesting for photovoltaic applications. Antireflection effects on the Si-air interface are obtained together with a very large reduction of the surface recombination velocity. This latter effect is explained in terms of hydrogen or chlorine adsorption at the SnO 2-Si interface via the completion of interface dangling bonds. Experimental evidence and theoretical considerations that support such an explanation are given. However, the question of whether or not chlorine could play a passivating role remains open. Finally some considerations are made concerning the possible uses of Sb doped SnO 2 layers on Si solar cells.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
