Abstract
We report on the electrical characterization and Raman spectroscopy of chemical vapor deposition copper-grown graphene transferred onto a Si/SiO2 substrate by high-speed (1 mm/s) electrochemical delamination. We determine graphene’s sheet resistance, carrier mobility, and concentration as well as its physical quality as a function of the electolyte concentration. Graphene’s electrical properties are investigated with standard Hall measurements in van der Pauw geometry and a contactless method that employs a single-post dielectric resonator operating at microwave frequencies. These properties are related to the widely used copper etching technique. The results prove that the high-speed electrochemical delamination provides good-quality graphene within a short time scale.
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