Properties of CdZnTe crystals grown by a high pressure Bridgman method

Abstract

CdZnTe crystals have been grown over the full range of alloy composition by a high-pressure Bridgman (HPB) method. Use of the inert gas over pressure reduces loss of material from the melt, and permits growth without the use of sealed ampoules, extending the range of possible alloys, and allowing a choice of crucible materials. The HPB method yields high-quality CdZnTe and enables room-temperature gamma radiation detectors to be made over large area wafers of undoped material for the first time.