Properties of CdSe1−xSx films by magnetron sputtering and their role in CdTe solar cells

Abstract

CdS/CdSe composite window layer is a better candidate than CdS or CdSe single layer for CdTe solar cells. In order to find the underlying reason, the properties of co-sputtered CdSe1−xSx thin films with different compositions ( $$0\le x\le 1$$ ) were examined. XRD patterns show that all CdSe1−xSx films ( $$0\le x\le 1$$ ) are polycrystalline with hexagonal structures and the prominent peak position shows an increasing trend with the increase of x. This suggests that CdSe1−xSx window layer with a gradient composition, formed during the high-temperature growth and heat treatment of CdTe films, has the gradient lattice constant, meaning the less defect density. This is beneficial to the device performance. Hall measurements show that CdS1−xSex films (x ≥ 0.772) are n-type semiconductors with carrier concentrations ranging from 1015 cm−3 to 1016 cm−3. It reveals that CdS/CdSe bi-layers can form a strong built-in electric field with CdTe layer as CdS does. The electronic band structure of CdSe1−xSx window layer with a gradient composition suggests that the spikes formed in the conduction band are lower than 0.3 eV, which would not impede the electron transport. The valence band alignment is beneficial for the hole transport. Therefore, an appropriate band alignment can be formed between CdSe1−xSx and CdTe layers. These results reveal that CdSe1−xSx film is a good candidate as the window layer for high-efficiency CdTe solar cells considering its structural, optical and electrical properties as well as its electronic structure.