Abstract
Cubic gallium nitride epilayers were successfully doped with carbon using an e-beam evaporation source. Room temperature Hall measurements revealed hole concentrations up to 6×10 17 cm −3 and hole mobilities of 200 cm 2/V s. Low temperature (2 K) photoluminescence showed a donor–acceptor transition at 3.08 eV, which could clearly be assigned to the incorporation of a carbon acceptor. Thermal activation measurements were performed. They exhibited an activation energy of E A=215 meV both in photoluminescence and electrical measurements, respectively.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
