Abstract
The electrical, structural, and compositional properties of thin films were examined as a function of lateral distance from Cr contacts. The local threshold voltage of transistor channels was large and negative near the contacts and eventually approached a maximum positive value. This result is consistent with heavy n‐type doping of the caused by lateral diffusion of chromium contact metal. Energy‐dispersive x‐ray analysis (EDAX) showed that chromium had diffused into the film up to a distance of 20 μm from the contacts. For films annealed with a maximum temperature of 370°C, the grain size was uniform across the channel. Samples annealed at 400°C for 4 h had an enhanced grain size near the contacts.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
