Abstract
Boron nitride thin films were deposited from B 2H 6 and N 2 gases using the plasma CVD technique at a low pressure. The formation of cubic boron nitride needs a negative substrate self-bias. The deposited films were characterized by infrared absorption spectroscopy and transmission electron microscopy which showed that the cubic BN consisted of microcrystals with 100–200 Å grain size. Optical reflectance measurements of the films were carried out at room temperature in the photon energy range 5–25 eV. Structure in the imaginary dielectric function spectra was in good agreement with that predicted for crystalline BN by previous energy band calculations.
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