Properties of BaPb1-xBixO3 as Observed in Single-Crystal Thin Films

Abstract

The resistivity, low-field Hall coefficient, optical transmission, reflectivity, and upper critical field have been measured for BaPb1-xBixO3 single-crystal thin films as a function of Bi content x. It is found that the semiconductive temperature dependence of resistivity, which evolves as x increases from 0.25, is intrinsic to the BaPb1-xBixO3 system. When x exceeds 0.3, the resistivity abruptly increases and the superconductivity disappears. These changes are accompanied by a change in the sign of the Hall coefficient. Based on these experimental results, a systematic change of the electronic structure of the BaPb1-xBixO3 system is discussed. Furthermore, various physical properties of the BaPb1-xBixO3 system are also derived based on a simple assumption.