Abstract
The present paper examines why a-Se has become the key photoconductor material in flat panel direct conversion X-ray image detectors. We critically examine the X-ray sensitivity of stabilized a-Se layers as a function of electric field and mean photon energy. The radiation energy W ± absorbed per free electron–hole pair liberated for photoconduction in both a-Se and a-Si:H seem to follow the Que–Rowlands rule of W ±≈2.2 E g +E phonon for amorphous semiconductors.
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