Abstract
Both crystal structure and energy band-structure changes caused by As+ implantation and by subsequent annealing in GaAs and in an In0.253Ga0.747As quantum well are studied. We demonstrate that the main implantation impact to the crystal structure is the creation of a large number of point defects and strong compressive strain of up to −0.1%. Raman and x-ray data demonstrate almost complete structural recovery for rapid thermal annealing temperatures⩾600 °C. While the lattice expansion becomes relaxed by annealing, the implantation-induced ionized point defects are still present up to the highest annealing temperatures applied. Under these circumstances, a 22 meV blueshift of the heavy-hole–electron (1hh–1e) transition within the quantum well and a substantial reduction of the nonequilibrium carrier lifetime remain as consequence of implantation.
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