Abstract
The peculiarities of formation and annealing, and energy level position of an iron–vacancy (FeV) pair in silicon were investigated using electron-spin resonance (ESR) and photo-ESR methods. The pairs are created in iron-doped float-zone grown silicon samples during electron-irradiation and survive annealing treatment at temperatures of 400–500°C. Results of a photo-ESR study suggest that FeV in silicon is a hole trap with an energy level positioned at about 0.51 eV above the valence band. The complexes of a vacancy and two iron atoms (2FeV) are less stable than the FeV pairs and anneal out at 300–350°C in the same samples.
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