Abstract
A high deposition rate of more than 2.2 nm/s was achieved for hydrogenated amorphous silicon nitride film by applying the substrate tuning method to glow-discharge decomposition of SiH4+NH3. The atomic ratio N/Si (1.1±0.1) in the film is nearly constant, irrespective of the increase of deposition rate. The valence-electron density and atomic density increase and buffered HF etch rate decreases with deposition rate. This high rate deposition method improves density in amorphous silicon nitride films.
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