Abstract
A family of novel aluminum-aluminum oxide cermet resistance thin films has been deposited by the controlled oxidation of thermally decomposing triethyl aluminum vapor. Film resistivity can be varied, controllably, from 10 −2 to 10 4 Ωcm. Over the range 10 −1−10 3 Ωcm , the temperature coefficient of resistivity decreases monotonically from zero to −1200 ppm/°C. High value resistors having surface resistivities from 1 kΩ/sq. to 1000 MΩ/sq. have been fabricated by conventional aluminum metallization patterning techniques and they are compatible with silicon wafer processing technology.
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