Abstract
The flourides BaF2, CaF2 and MgF2 have been investigated as barrier materials in Nb/Pb Josephson tunnel junctions. The evaporated films had the same crystal structure as the bulk materials. Fair tunnel junction IV-curves were obtained. The specific capacitance of fluoride based junctions is comparatively small. However, measurements of the dielectric constant using the Josephson plasma resonance and the Fiske resonance gave values smaller and higher, respectively, than the tabulated low frequency values. The junction resistance increased considerably with time when stored in air at room temperature.
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