Properties of Al-doped ZnO film transistors with different source and drain electrodes

Abstract

We report the influences of Al doping and source/drain electrodes on the electrical performances of ZnO thin film transistors (TFTs).The electron mobility of Al-doped ZnO (AZO) films increases by two orders of magnitude with 1% Al doping, thus improving the performances of ZnO TFTs. TFTs with Ti/Pt source/drain electrodes exhibit better saturation and ON/OFF properties than that with Al electrodes, however, its drain current is relatively lower due to the Schottky structure formed between Pt/Ti and AZO layers.