Abstract
The characteristics of heterostructures and the main radiative properties of infrared (1.4--1.8 ..mu..) heterojunction lasers using quaternary solid solutions of AlGaAsSb, grown by liquid--phase epitaxy of GaSb substrates, are presented. A threshold current density of 2--4 kA/cm/sup 2/ was obtained in heterojunction injection lasers at 300 /sup 0/K and estimates were made of the waveguide effect and the optimal thickness of the active layer. It was found that the relative discontinuity of the refractive index at the interfaces of the active layer was approximately 5% for a 25% reduction in the Al concentration from the wide- to narrow-gap layers of the heterostructure. Continuous-wave laser action at 77 /sup 0/K was obtained in the 1.40--1.57 ..mu.. wavelength range.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
