Properties of a-C:H:Si thin films deposited by middle-frequency magnetron sputtering

Abstract

The silicon doped hydrogenated amorphous carbon (a-C:H:Si) films were prepared on silicon substrates by middle-frequency magnetron sputtering silicon target in an argon and methane gas mixture atmosphere. The deposition rate, chemical composition, structure, surface properties, stress, hardness and tribological properties in the ambient air of the films were systemically investigated using X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM), atomic force microscopy (AFM), nanoindentation and tribological tester. The results show that doped silicon content in the films is controlled in the wide range from 39.7at.% to 0.2at.% by various methane gas flow rate, and methane flow rate affects not only the silicon content but also its chemical bonding structure in the films due to the transformation of sputtering modes. Meanwhile, the sp3 carbon component in the films linearly increases with increasing of methane flow rate. The film deposited at moderate methane flow rate of 40–60sccm exhibits the very smooth surface (RMS roughness 0.4nm), low stress (0.42GPa), high hardness (21.1GPa), as well as low friction coefficient (0.038) and wear rate (1.6×10−7mm3/Nm). The superior tribological performance of the films could be attributed to the formation and integral covering of the transfer materials on the sliding surface and their high hardness.