Properties of a-SiN x .: H films deposited at room temperature by the electron cyclotron resonance plasma method

Abstract

Abstract a-SIN x :H films with a wide composition range (0·27≤×≤1·38), and some of them with low oxygen content, have been deposited at room temperature by the electron cyclotron resonance plasma deposition method. Auger electron spectro-scopy, infrared absorption, and transmittance and reflectance of the films in the ultraviolet/visible/near-infrared range are reported. Three different types of film are obtained: silicon rich, near stoichiometric and oxygen contaminated. At x =1·00, the hydrogen content, calculated from the infrared spectra, is a minimum (about 10 at.%), the N-H bond density becomes higher than the Si[sbnd]H density, and the slope of the Tauc plot (B) and the Urbach tail (E u), obtained from absorption coefficient results, reach minimum and maximum values, respectively. Hydrogen incorporation into the network is found to be related to that of nitrogen. A relationship between the hydrogen content and the optical properties of the films is deduced by comparing the results with those publis...