Abstract
The present paper examines why a-Se has become the key photoconductor material in flat panel direct conversion X-ray image detectors. We critically examine the X-ray sensitivity of stabilized a-Se layers as a function of electric field and mean photon energy. The radiation energy W ± absorbed per free electron–hole pair liberated for photoconduction in both a-Se and a-Si:H seem to follow the Que–Rowlands rule of W ±≈2.2 E g +E phonon for amorphous semiconductors.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
