Abstract
ABSTRACT A novel liquid bismuth precursor dimethyl(2-N,N-dimethylaminomethylphenyl)bismuth, BiMe2(Me2NCH2Ph), was synthesized and its physical properties were examined. BiMe2(Me2NCH2Ph) showed physical properties suitable for metalorganic chemical vapor deposition (MOCVD) and is a nonexplosive compound. It exhibited enough vapor pressure (0.1 Torr/55°C), excellent volatility, and adequate decomposition temperature. As films preparation, Bi4Ti3O12 thin films could be prepared by MOCVD using BiMe2(Me2NCH2Ph) Ti(OiC3H7)4 and O2 gas as starting materials. Other bismuth-contained oxide films can be also prepared by using BiMe2(Me2NCH2Ph).
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