Abstract
AbstractUndoped GaN epilayers were grown on c-plane sapphire substrates under different growth temperatures by metalorganic chemical vapour deposition (MOCVD). The optical and structural characteristics of these grown samples were studied and compared. It was found that the crystalline quality of GaN film deposited at 1050°C was better that of other samples. Photoluminescence spectra showed that the intensities of yellow luminescence band of the samples decreased as the growth temperature increased. All above test results demonstrate that high temperature deposition can serve as a good method for high-quality GaN epilayer growth and there exists an optimal growth temperature.
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