Abstract
Aluminum nitride is not so extensively applied because of low productivity and high cost due to necessity of high sintering temperature over 1900 °C and long sintering time around 10 h. In the present study, high thermal conductivity over 200 W/(m K) was attained by sintering with 28 GHz millimeter-wave heating at 1700 °C for 2 h under nitrogen/hydrogen mixed gas atmosphere. Attainment of such a high thermal conductivity of aluminum nitride sintered by millimeter-wave at low temperature for a short time is attributed to a characteristic microstructure induced by millimeter-wave heating. From the results of the observation by high resolution TEM, the intergranular film layer between aluminum nitride grains in the sintered body by millimeter-wave heating was as thin as difficult to be observed, resulting in remarkable enhancement of heat transfer at the thinner intergranular phase. Therefore, high thermal conductivity was attained in the millimeter-wave-sintered aluminum nitride in spite of short sintering time and low sintering temperature, compared with the conventional sintering method.
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