Abstract
Properties of phosphosilicate glass films deposited at high‐density plasma (HDP) conditions have been studied for film application as a premetal dielectric in subquarter‐micrometer ultralarge scale integration (ULSI) device technology. Films were more dense and more stable compared to borophosphosilicate glass films, and provided void‐free gap‐fill for rectangular in section device structures with gap spacing and aspect ratio . Results of gap‐fill capability study and previously published data have been described with empirical linear dependence where k was found to be a function of HDP chemical vapor deposition (HDP‐CVD) conditions. It has been shown that to achieve void‐free gap‐fill capability of films for structures with gaps as low as and aspect ratios about four and higher, top comer rounding of structures and sidewall slope less than 90° must be implemented. An approach to evaluate an impact of structure rounding in HDP‐CVD gap‐fill capability has been proposed. ©2000 The Electrochemical Society
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