Abstract
Ga:ZnO whiskers were grown by atmospheric chemical vapor deposition on single crystalline silicon (100). By adjusting the concentration of the gallium dopant, the crystallite density and radius of curvature could be varied. The c-axis orientation of the Ga:ZnO crystallite was less than that of the Al:ZnO crystallite. The field emission characteristics of Ga:ZnO whisker emitters were investigated by varying the crystallite density and radius of curvature. Moreover, when the crystallite density was in the range 0.8 × 104-1.6 × 104/mm2 and the crystallite radii of curvature were in the range 46-106 nm, the electric field, E, necessary to obtain a current density, J, of 100 μA/cm2 was in the range 5.3-5.7 V/μm.
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