Properties-Adjustable Alumina-Zirconia Nanolaminate Dielectric Fabricated by Spin-Coating.

Junbiao Peng,Rihui Yao,Yanqiong Zheng,Hong Tao,Jinglin Wei,Kuankuan Lu,Honglong Ning,Xubing Lu,Zhennan Zhu,Wei Cai

doi:10.3390/nano7120419

Junbiao Peng, Rihui Yao + Show 8 more

Open Access

https://doi.org/10.3390/nano7120419

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Abstract

In this paper, an alumina-zirconia (Al2O3-ZrO2) nanolaminate dielectric was fabricated by spin-coating and the performance was investigated. It was found that the properties of the dielectric can be adjusted by changing the content of Al2O3/ZrO2 in nanolaminates: when the content of Al2O3 was higher than 50%, the properties of nanolaminates, such as the optical energy gap, dielectric strength (Vds), capacitance density, and relative permittivity were relatively stable, while the change of these properties became larger when the content of Al2O3 was less than 50%. With the content of ZrO2 varying from 50% to 100%, the variation of these properties was up to 0.482 eV, 2.12 MV/cm, 135.35 nF/cm2, and 11.64, respectively. Furthermore, it was demonstrated that the dielectric strength of nanolaminates were influenced significantly by the number (n) of bilayers. Every increment of one Al2O3-ZrO2 bilayer will enhance the dielectric strength by around 0.39 MV/cm (Vds ≈ 0.86 + 0.39n). This could be contributed to the amorphous alumina which interrupted the grain boundaries of zirconia.

Highlights

Oxide thin film transistors (TFTs) have attracted considerable interest because of their high-performance
In addition to oxide semiconductors, which were mostly investigated in the last few decades, the metal oxide dielectric plays an important role in the performance of TFTs
The TiOx and AlOx nanolaminate dielectric has been applied in organic devices as moisture barriers by Nehm et al, and it is helpful to delay the degradation of OLEDs which was caused by moisture erosion [4]

Summary

Introduction

Oxide thin film transistors (TFTs) have attracted considerable interest because of their high-performance. In addition to oxide semiconductors, which were mostly investigated in the last few decades, the metal oxide dielectric plays an important role in the performance of TFTs. In recent years, as a novel structure of dielectrics, a nanolaminate dielectric has been studied and applied widely in optoelectronic devices [1,2]. Spin-coating has attracted more and more attention for low cost, simplicity, and high throughput [8]. Metal oxide dielectrics, such as Al2O3, HfO2, and ZrO2 can be obtained by spin-coating [9,10,11]. It has the potential to realize fully transparent, flexible, and portable electronics [12,13]

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