Abstract
Calculation of concentrations of free charge carriers and point defects in monocrystals of cadmium telluride is carried out at the boundary of the region of existence of the compound. The type of dominating proper point defects determining the electrical properties of the material at an excess of cadmium is identified. The maximum annealing temperatures and partial vapor pressures of two-temperature annealing at which a material with electron conductivity is obtained are determined.
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