Abstract
A theory for the propagation loss of surface acoustic waves on a monolithic metal-insulator-semiconductor structure is developed. We derive the theory for the case where an epitaxial layer of semiconductor on a heavily doped substrate is used. The experimental results obtained by using Sezawa waves on a monolithic ZnO/SiO2/Si structure are compared with the theoretical predictions. The theoretical values are in good agreement with the experimental values in regard to the bias-voltage characteristics, the temperature characteristics, and the effects of the impurity concentration and the thickness of the epitaxial layer. It is shown that the surface-acoustic-wave propagation loss is considerably sensitive not only to the impurity concentration but also to the thickness of the epitaxial layer.
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