Propagation characteristics of parallel dark solitons in silicon-on-insulator waveguide**Project supported by the National Natural Science Foundation of China (Grant No. 61741509).

Abstract

The propagation characteristic of two identical and parallel dark solitons in a silicon-on-insulator (SOI) waveguide is simulated numerically using the split-step Fourier method. The parallel dark solitons imposed by the initial chirp are investigated mainly by changing their power, their relative time delay. The simulation shows that the time delay deforms the parallel dark soliton pulse, forming a bright-like soliton in the transmission process and making the transmission quality down. By increasing the power of one dark soliton, the energy of the other dark soliton can be increased, and larger increase in a soliton’s power leads to larger increase in the energy of the other. When the initial chirp is introduced into one of the dark solitons, higher energy consumption is observed. In particular, positive chirps resulting in pulse broadening width while negative chirps narrowing, with an obvious compression effect on the other dark soliton. Finally, large negative chirps are found to have a profound impact on parallel and nonparallel dark solitons.