Abstract
The propagation behaviour of threading screw dislocations (TSDs) during 4H-SiC crystal growth using high-off-angle seeds was investigated. By studying the conversion ratio of TSD to basal plane defects during physical vapour transport (PVT) growth and hybrid growth (combination of solution growth and PVT growth) on various off-angle seeds, we suggest an energy diagram showing the off-angle dependence of the dislocation energy which explains the activation barrier of dislocation conversion.
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