Promising memristive behavior in MoS2–MoO2–MoO3 scalable composite thin films

Abstract

Abstract Simple fabrication of materials with superior memristive behaviors is a key aspect of developing functional memristor devices. Partially oxidized MoS2 thin layers have been one of the most attractive candidates due to their promising memristive characteristics. However, its fabrication involves complicated multi-step methods. Here, we fabricate a thin film composed of MoS2, MoO2 and MoO3 elements (MoSO) with distinguishable memristive behaviors through electrodeposition technique. Both electrochemical metallization (ECM) and valence change (VCM) memristive responses observed with different top electrodes. By using Ag as the top electrode, the device shows ECM memristive behavior with low threshold voltages of ∼0.1–0.2 V, and on/off ratio of ∼200. Different VCM memristive behaviors at different voltage sweep intervals are observed in the case Au is used as the top electrode. The results indicate that the memristive behavior originates from the composite nature of the MoSO layer. An annealed MoSO layer in Ar and air, producing pure phases of MoS2 and MoO3, respectively, did not show memristive behavior. This simple one-step synthesis of the MoSO layer at room temperature with its possibility for scalable production may pave the way for development of functional memristors.