Abstract
The temperature dependences of the thermoelectric properties of Ge2Sb2Te5 (p-type) and Bi2Te2.8Se0.2 (n-type) thin films obtained by magnetron and vacuum thermal evaporation, respectively, are under investigation. The effect of crystallization on the Seebeck coefficient of Ge2Sb2Te5 thin films is established. The temperature dependences of the power factors of the investigated thin films are determined. Film thermoelements based on Ge2Sb2Te5 and Bi2Te2.8Se0.2 materials have sufficiently high thermoelectric properties and can be used for manufacturing flexible film thermoelectric generators (TEGs). Computer simulation of the characteristics of a flexible film TEG using the proposed multi-physics model of a flexible film TEG is carried out. The characteristics of the TEG are determined at various ambient temperatures and various electrical loads, which make it possible to optimize the geometric parameters of thermoelements. The optimal operating temperatures of TEGs for wearable electronics are determined.
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