Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect

Abstract

This letter reports fabrication and testing of integrated circuits (ICs) with two levels of interconnect that consistently achieve greater than 1000 h of stable electrical operation at 500 °C in air ambient. These ICs are based on 4H-SiC junction field-effect transistor technology that integrates hafnium ohmic contacts with TaSi2 interconnects and SiO2 and Si3N4 dielectric layers over $\sim 1$ - $\mu \text{m}$ scale vertical topology. Following initial burn-in, important circuit parameters remain stable within 15% for more than 1000 h of 500 °C operational testing. These results advance the technology foundation for realizing long-term durable 500 °C ICs with increased functional capability for sensing and control combustion engine, planetary, deep-well drilling, and other harsh-environment applications.