Projectile’s mass-dependent nanopatterning of Si (1 0 0) for different incidence angles

Abstract

Control over the dimensions of nanoscale patterns on macroscopic areas of solid surfaces by varying ion beam parameters has been useful in electronic, optic and optoelectronic applications. This work presents a comparative study on projectile’s (Ar and Kr) mass-dependent growth of ripples as a function of the incidence angle. Oblique implantation produces ripples between 50°-70° with highest ordering at ∼ 60°. Heavy mass implantation (Kr+) produces higher amplitude of ripples with shorter wavelength as compared to lighter Ar+ ion, and vice versa. Compositional study shows that the broader near surface damage for Ar+ under higher penetration range produces longer ripple wavelength as compared to Kr+.