Abstract
Characteristics of heterostructure tunneling FETs (HTFETs) at microwave and mm-wave frequencies are reviewed, and their simulated performance in a variety of prototype circuits is presented. The results illustrate that HTFETs provide substantial benefits in low power, high frequency circuits, related to their high nonlinearity at low voltages (critical to rectifiers and mixers), as well as to their high transconductance and gain at low current and low power levels. Parasitic capacitance and noise models of HTFETs are summarized. mm-wave low noise amplifiers, oscillators, and mixers with simulated operation at power levels below 1 mW are described. High responsivity passive mm-wave detectors which could provide noise-equivalent temperature differences below 1 °C are presented.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
