Abstract
Quantum Dot Intermediate Band Solar Cell (QDIBSC) is one of the emerging technologies in the solar photovoltaic arena, which has immense potential to be demonstrated as a high efficiency device. For a QDIBSC to surpass the efficiency of a single junction cell, optimization of design is required. In this work, a QDIBSC model based on In0.53Ga0.47As quantum dots has been designed and evaluated with respect to dot size and spacing. The impact of carrier lifetime on short-circuit current and open-circuit voltage is studied. The conversion efficiency has been enhanced from 27.1% to 32.62% as compared to a conventional single junction cell.
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