Abstract
In this paper, we report the progressive electrical degradation and consequent breakdown (both soft and hard-breakdown regimes) of thin W-La 2 O 3 stacked films deposited on silicon substrates and their influence on the electrical characteristics of Metal-Oxide-Semiconductor (MOS) devices. Initial electrical degradation of the MOS devices results in an increase of the gate oxide leakage current (mostly known as Stress-Induced Leakage-Current, SILC), with the device's practical effect being a monotonous shift in threshold voltage (ΔVth) after constant voltage stressing. Following the initial degradation of the gate oxide, both soft and hard-breakdown modes are detected and their influence on the electrical characteristics of the MOS devices are also obtained and compared.
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