Progresses with realizations of Si Av LEDs (650-750nm wavelength) in CMOS and RF Bipolar Integrated Circuitry - Designs and applications

Abstract

Silicon Avalanche-based p+nn+ Light Emitting Devices (SiAvLEDs) have been developed in a silicon 0.35 micron RF bi-polar process with emission intensities up to 200 nWμm-1. The spectral range is in the 600 nm to 850 nm wavelength region. The achieved emitted optical intensity is 100 fold better as compared with recent other published work for nearest related devices. Particularly, evidence has been obtained that light emission in silicon are strongly related to scattering mechanisms are strongly dependent on the high density n+ dopant matrix of phosphorous atoms in silicon that has been exposed to successive thermal cycles. Specific design aspects are discussed according to carrier energy and momentum engineering concepts and device modeling. Diverse sets of experimental results are presented in this regard. Some potential applications are discussed for next generation realization of various photonic circuits in standard silicon integrated circuitry. Recent achievements and progresses with the high frequency modulation of on-chip optical links using a standard RF bipolar process are discussed. Some potential applications with the realization of micro-optical sensors on silicon chips are presented.