Abstract
Abstract Early predictions that diamond would be a suitable material for high performance, high power devices were not supported by the characteristics of diodes and field effect transistors (FETs) fabricated on boron doped (p-type) thin film material. In this paper, commercially accessible polycrystalline thin film diamond has been turned p-type by the incorporation of near surface hydrogen. Schottky diodes and metal-semiconductor FETs (MESFETs) have been fabricated using this approach which display excellent performance levels; diodes with a rectification ratio >10 6 , leakage currents V DS values of 100 V with low leakage and current saturation (pinch-off) characteristics have also been fabricated. Predictions based upon experiments performed on these devices suggest that optimised device structures may be capable of operation at power levels up to 10 W mm −1 , implying that thin film diamond may, after all, be an interesting material for power applications.
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