Abstract
The performance of dual-junction solar cells with a Si bottom cell has been investigated both theoretically and experimentally. Simulations show that adding a top junction with an energy bandgap of 1.6 -1.9eV to a standard silicon solar cell enables efficiencies over 38%. Currently, top junctions of GaInP (1.8eV) are the most promising as they can achieve 1-sun efficiencies of 20.8% [1]. We fabricated mechanically stacked, four terminal GaInP/Si tandem solar cells using a transparent adhesive between the subcells. These tandem devices achieved an efficiency of 27% under AM1.5g spectral conditions. Higher efficiencies can be achieved by using an improved Si-bottom cell and by optimizing the dual-junction device for long-wavelength light and luminescent coupling between the two junctions.
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