Abstract

A high-brightness photoemission source is being developed for use in a multiple-electron beam lithography system suitable for mask patterning. Cesium telluride (Cs2Te) photocathodes have achieved stable brightness of 2–3×106 A/cm2 Sr and current densities of 30–60 A/cm2. Magnesium photocathodes have achieved stable brightness of 1–3×106 A/cm2 Sr and current density of 40 A/cm2. Long term current stability of better than the required specification of 17%/5 min has been obtained at photoyields of ∼30 nA/mW.

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