Abstract
Polycrystalline diamond in the presence of silicon with different sintering times was investigated under high pressure and high temperature of 5.0 GPa and 1400 °C, respectively, using a multi-anvil apparatus. In this research, phase analysis demonstrated that the content of SiC increased and the amount of Si decreased clearly with the sintering time extending by X-ray diffraction (XRD). The characterization of the sintered body demonstrated that the electrical resistance decreased as the reaction time rose. Specimens with good conductivity of 17 Ω·cm−1 sintered for 20 min at 1400 °C under 5.0 GPa were successfully obtained. The measured Vickers hardness and thermal stability of the synthesized diamond-SiC composites in the present study were >40 GPa and 1450 K, respectively.
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