Abstract
AbstractIn the nearly 45 years since Stan Ovshinsky's original publication [Phys. Rev. Lett. 21, 1450 (1968)] announcing the discovery of electric‐field‐induced threshold switching in chalcogenide alloy semiconductor glass thin films, the field of amorphous semiconductor physics has developed remarkably. Many commercial applications of these materials have been developed, including X‐ray image intensifiers, photocopier photoreceptors, and optical and electrical phase change memory devices. Despite these developments, a universally agreed upon, comprehensive model for the Ovshinsky Effect threshold switch still has not emerged. This paper is a brief review of the present state of understanding of this fascinating solid state physics phenomenon.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
