Abstract
MS2 (M = Mo; W), with natural atomic thickness, are typical two-dimensional (2D) semiconductor materials, which have excellent electronic/optoelectronic properties and mechanical flexible properties. With the development of semiconductor device miniaturization, much attention has been brought to MS2, especially in large-scale integrated circuits, ultra-sensitive photodetectors, and flexible electronic devices. Here, we present the recent research progress on the controllable synthesis of high-quality, wafer-scale, uniform monolayer and multilayer MS2 films by chemical vapor deposition methods, focusing on the most concerning grain orientation control and defect modulation in whole wafer, besides the pursuit of more larger wafer size in MS2 films’ preparation. We also discuss some critical issues in the process of MS2 films growth and give a brief outlook in the controllable preparation of high-quality MS2 films for device application later on.
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