Abstract
We report on recent progress and improvements in the metal-organic chemical vapor deposition (MOCVD) of mid-infrared InAsSb emitters using a high speed rotating disk reactor (RDR). The devices contain AlAsSb claddings and strained InAsSb active regions. These emitters have multi-stage, type I, InAsSb/InAsP quantum well active regions. A semi-metal GaAsSb/InAs layer acts as an internal electron source for the multi-stage injection lasers and AlAsSb is the electron confinement layer. These structures are the first MOCVD multi-stage devices. Growth in an RDR was necessary to avoid the previously observed Al memory effects found in a horizontal reactor. Broadband LEDs produced 2 mW average power at 3.7 μm and 80 K and 0.1 mW at 4.3 μm and 300 K. A multi-stage, 3.8–3.9 μm laser structure operated up to T=180 K. At 80 K, peak-power >100 mW/facet and a high slope-efficiency (48%) were observed in these gain guided lasers.
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