Abstract
CdZnTe detectors have been under development for the past two decades, providing good stopping power for gamma rays, lightweight camera heads and improved energy resolution. However, the performance of this type of detector is limited primarily by incomplete charge collection problems resulting from charge carriers trapping. This paper is a review of the progress in the development of CdZnTe unipolar detectors with some data correction techniques for improving performance of the detectors. We will first briefly review the relevant theories. Thereafter, two aspects of the techniques for overcoming the hole trapping issue are summarized, including irradiation direction configuration and pulse shape correction methods. CdZnTe detectors of different geometries are discussed in detail, covering the principal of the electrode geometry design, the design and performance characteristics, some detector prototypes development and special correction techniques to improve the energy resolution. Finally, the state of art development of 3-D position sensing and Compton imaging technique are also discussed. Spectroscopic performance of CdZnTe semiconductor detector will be greatly improved even to approach the statistical limit on energy resolution with the combination of some of these techniques.
Highlights
Semiconductor nuclear radiation detectors have experienced a rather rapid development in the last few decades
Semiconductor detectors avoid the random effects associated with scintillation light production, propagation and conversion to electrical signal in such a way that they represent the main alternative to scintillator-based single photon imaging systems
This paper reviews the techniques of overcoming hole trapping problems for cadmium zinc telluride (CdZnTe) detector, including particular irradiation configuration of the same, electronic methods to distinguish events from a large contribution of the holes and the various electrode designs
Summary
Semiconductor nuclear radiation detectors have experienced a rather rapid development in the last few decades. Semiconductor detectors avoid the random effects associated with scintillation light production, propagation and conversion to electrical signal in such a way that they represent the main alternative to scintillator-based single photon imaging systems. The incident gamma-ray interacts with the semiconductor and excites electron-hole pairs, that are proportional to the deposited energy and drifts apart under the applied electric field. It is due to the direct conversion from the energy deposition by gamma-ray interaction to electric signal that semiconductor detector can achieve high energy resolution and spatial resolution [3]. This paper reviews the techniques of overcoming hole trapping problems for CdZnTe detector, including particular irradiation configuration of the same, electronic methods to distinguish events from a large contribution of the holes and the various electrode designs. We review the state of art development of 3-D position sensing and Compton imaging techniques using CZT detectors
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