Abstract
ASML has continued to make significant investments in the development of extreme ultraviolet lithography (EUVL), addressing the critical challenges, including defect-free mask handling, reflective optics technology, environmental control, and source. We present updates in these key areas and in the realization of our process development exposure tool. This tool is used to minimize the risk of EUVL for the 45-nm technology node and below, and to support the development of the global infrastructure of masks, sources, and resist. Realization of the process development tool is well underway; most of the modules are in vacuum qualification and functional testing. From arial image simulations, we conclude that EUVL tools are particularly suited for contact printing, due to the use of dark-field masks, and hence, limited influence of flare.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
