Abstract
Solar cells with polysilicon-based passivating and carrier selective contacts are in the nascent stages of industrialization. Advances in commercially available metallization pastes are necessary to further improve the efficiency of industrial polysilicon-based solar cells and approach the best-reported lab efficiency of such cells. In this work, we have analyzed the front and rear screen-printed metallization of large-area n-type monoPolyTM cells with rear-side low-pressure chemical vapor deposited (LPCVD) polysilicon. Metallization pastes specifically optimized for contacting poly-Si layers are used in this work. The metallization is evaluated by studying its impact on the solar cell performance and by further electrical and optical characterization. An efficiency improvement of 0.5% absolute is demonstrated due to improvements in metallization pastes with a 23% champion cell efficiency (cell area: 244.3 cm2, busbarless metallization). An analysis of the fabricated cells indicates that the efficiency is currently limited by recombination at the front surface, both at the passivated and the metallized regions.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
