Abstract
Mid-infrared diode lasers (/spl lambda/=1.7-5 /spl mu/m) fabricated from GaInAsSb/AlGaAsSb heterostructures grown on GaSb substrates have been under development at Lincoln Laboratory for the past five years. Performance breakthroughs have been achieved by employing strained multiple-quantum-well active regions, and cw output power as high as 1.3 W has been obtained at room temperature near 2 /spl mu/m. These lasers, either employed as direct sources or for pumping of solid state lasers, can be used for a variety of applications exploiting the characteristics of this spectral range, which is eyesafe and includes important atmospheric transmission bands and molecular absorption lines.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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