Abstract
Recent advances in InP MISFET technology are reviewed in this paper. A significant improvement in the interface properties of insulator-semiconductor system has been shown to result through the selection of insulators compatible with InP. Tho processing conditions are also very important for obtaining good dielectric films with low interface state density for successful operation of these devices. Among the dielectrics yielding the best result are P-doped SiO2 and BN films. A new deposition technique of high temperature insulator like BN using a pulsed ruby laser has been discussed. This technique avoids substrate heating during deposition and consequently reduces P-outdiffusioin from InP surface.
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